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Topic: Technology
Number of pages / Number of words: 3 / 636
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Thereby the temperature is compatible with post-CMOS processing even if increasing the voltage to the growth condition (~900?C).

The SWNT growth was carried out within a quartz tube at room temperature using a 50-sccm C2H4 and 200-sccm H2. For a 15-minutes growth, SWNTs were successfully obtained, as shown in Fig...


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For a 15-minutes growth, SWNTs were successfully obtained, as shown in Fig. 5. Most SWNTs are aligned along the E-field introduced by the supply voltage between the microheater and a nearby cold ground electrode. The I-V curve in Fig. 6 is the result measured between pad A and C in Fig. 1(c). Future work will focus on microheater scaling and optimization, E-field and temperature manipulation, investigation of other electrode materials (such as Pd, Mo), and SWNT-CMOS integration...


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